DEEP LEVELS RELATED TO COPPER IN SILICON
硅中铜的深能级研究

The energy positions and carrier capture cross-sections of the deep levels related to copper in silicon are measured by DLTS. The annealing behaviour and spatial distributions of some of these levels are studied at the same time. The results show that there are not any triple acceptor or quadruple state corresponding to substimtional copper in silicon, which have been reported in the literature. Most of the deep levels related to copper in silicon are corresponding to complexes of copper and defects in silicon.