A NEAR IR PHOTOCATHODE WITH 0.7-1.65μm PHOTORESPONSE
光谱响应范围为0.7-1.65μm的一种近红外光阴极

A near IR GaP/Ga(1-x)InxP/Ga0.47In0.53As (x:0→1) photocathode with 0.7-1.65 photoresponse is proposed and designed. The photoemission of the GaP/Ga(1-x)InxP/Ga0.47In0.53As is calculated and eompared with the photoemission of the GaAs photocathode (0.4-0.9μm) under night sky (full moon and clear star) irradiation.