The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

This paper studies the effects of silane back diffusion in the initial plasma ignition stage on the properties of microcrystalline silicon ($\mu $c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying the injection of SiH$_{4}$ gas to the reactor before plasma ignition. By comparing with standard discharge condition, delayed SiH$_{4}$ gas condition could prevent the back diffusion of SiH$_{4}$ from the reactor to the deposition region effectively, which induced the formation of a thick amorphous incubation layer in the interface between bulk film and glass substrate. Applying this method, it obtains the improvement of spectral response in the middle and long wavelength region by combining this method with solar cell fabrication. Finally, results are explained by modifying zero-order analytical model, and a good agreement is found between model and experiments concerning the optimum delayed injection time.