ELECTRICAL TRANSPORT BEHAVIOR OF AN Au DIFFUSE FRINGE FILM PERCOLATION SYSTEM

The preparation of a metallic diffuse fringe film system by dc-magnetron sputtering is described. The diffuse fringe structure of the film system is clearly observed in the SEM photograph when, during the film deposition process, the distance between the slit shutter and the substrate is large enough. Our experimental results show that the anomalous nonlinear I-V behavior of the system is mainly caused by the diffuse fringe effect. The temperature dependence of the sheet resistance is similar to that of the metallic flat film system in the temperature interval 77-300 K.