MOCVD GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As QUANTUM HETEROSTRUCTURES
MOCVD 生长及 TEM 表征 GaAs/Al_xGa_(1-x)As 量子异质结构材料

The MOCVD growth of GaAs/Al_xGa_(1-x)As quantum heterostructures(in-cluding superlattices,quantum wells,double barrier resonant tunneling diods)are reportedin this paper.The interface structures of the epilayers are characterized by cross-sectionaltransmission elcetron microscopy.Multiquantum well and superlattice have good periodicityand abrupt interfaces.The TEM satellite diffraction pattern of the superlattices was observedwith(100)cross section.The infrared absorption from electron intersubband transition inquantum well was observed.The relation between MOCVD growth process and epilayer struc-tures was studied in detail.Sixty seconds interruption may cause additional interfaces whichhave deep influence on the RT device performance.