Preparation and tribological behaviour of nanostructure TiN films
纳米结构TiN薄膜的制备及其摩擦学性能

Nano-structure TiN thin films were deposited on silicon substrate at room temperature using filtered cathodic arc plasma (FCAP) system. The effects of negative substrate bias on the structure and property were studied. The microstructure and morphology of TiN thin films were characterized by AFM and XRD. The results show that the TiN thin films deposited by FCAP are very smooth and dense, and the grain size of the TiN ranges from 50-80 nm that increases with increasing the negative voltage. The preferred crystalline orientation was on the denser (111) orientation, and the friction coefficients of this kind of TiN films were lower than that of conventional TiN films. SEM photographs of wear trace indicated that the films were dense and macroparticle-free.