EFFECT OF ANNEALLING ON STRUCTURE AND ELECTRONIC COMPOSITION OF OXYGEN SENSITIVE CeO_(2-x) FILMS
退火对氧敏CeO2—x薄膜结构及电子组态的影响

The CeO2-x films are deposited from a sintered CeO2-x ceramic target by reactive high frequency sputtering magnetron system. Influence of annealling process on the composition and Structure of CeO2-x films were determined by XRD, AFM and XPS. The results showed that the sputtered CeO2-x thin films had achieved a composition closed to stoichiometric and ultimate crystallization after annealling process in air. There were always a small amount of Ce3+ in the films before and after annealling process. The grain sizes depended markedly on the annealled conditions. The annealling process below 1173K caused slightly preferential orientations formed in the (200) direction.The (111)direction was the thermodynamically stable sudece of the films after annealling above 1373K.