EFFECT OF DOPING V_2O_5 ON GAS SENSITIVE CHARACTER OF SnO_2
掺V2O5对SnO2气敏性能的影响

Effect of doping V2O5 on resistance and stability of SnO2 element is studied. The experiment results show that the resistance drops when the V2O5 content is fewer than 0.56w.%, and the resistance rises when the V2O5 content is more than 0.56w.% and the stability is improved and sensitivity drops with V2O5 doping. These electric behaviours are studied by CNDO / 2 method. By doping V, the stability of FMO of SnO2 is improved, consequently, the materical stability is also improved. In low doping content, the resistance drops for the increasing of both Sn electron and O hole state, in high doping content, the resistance tises for the holding up of electron tranfer path.