全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

Keywords: 85,30,De,81,05,Ea,73,40,-c

Full-Text   Cite this paper   Add to My Lib

Abstract:

The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133