Photoinduced Resistance Change in an Oxygen-Deficient La 0.9 Sr 0.1 MnO 3-δ Thin Film

Photoinduced resistance change （ △ R/R） in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75 ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △ R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic devices.