A Statistical Method for Characterizing CMOS Process Fluctuations in Subthreshold Current Mirrors
一种用于表征亚阈值电流镜电路中CMOS工艺波动的统计学方法

A novel method to characterize CMOS process fluctuations in subthreshold current mirrors (SCM) is reported.The proposed model is succinct in methodology and calculation complexity compared with previous statistical models.However,it provides favorable estimations of CMOS process fluctuations on the SCM circuit,which makes it promising for engineering applications.The model statistically abstracts physical parameters,which depend on the IC process,into random variables with certain mean values and standard d...