Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells
Influence of absorber doping in a-SiC：H/a-Si：H/a-SiGe：H solar cells

This work deals with the design evaluation and influence of absorber doping for a-Si:H/a-SiC:H/a-SiGe:H based thin-film solar cells using a two-dimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing necessary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, Schokley-Read Hall recombination model, Auger recombination model, bandgap narrowing effects, doping and temperature dependent mobility model and using Fermi-Dirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top a-Si and bottom a-SiGe component cells. A moderate n-doping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the VOC (and fill factor) of the device.