Phase noise modeling in LC oscillators implemented in SiGe technology
Modelling of high frequency noise in LC oscillator built around a SiGe HBT induced by low frequency electrical defects sources imbedded in the transistor

This paper addresses phase noise analysis of a radiofrequency LC oscillator built around a SiGe heterojunction bipolar transistor (HBT) realized in a 0.35 μm BiCMOS process, as an active device. First, we give a brief background to SiGe HBT device physics. The key point is to initiate quantitative analysis on the influence of defects induced during extrinsic base implantation on electric performances of this device. These defects are responsible for the current fluctuations at the origin of low frequency noise in BiCMOS technologies. Next, we investigate the effect of implantation defects as a source of noise in semiconductors on the phase noise of a radiofrequency LC oscillator. We observe their influence on the oscillator phase noise, and we quantify the influence of their energy distribution in the semiconductor gap. Second, we give a behavioral model of an LC oscillator containing a SiGe HBT as an active device. The key goal is to study the susceptibility of a radiofrequency oscillator built around a SiGe HBT to phase noise disturbance sources. Based on the time variance behavior of phase noise in oscillators, transient simulations (in the time domain) were used to analyze the time-dependent noise sensitivity of the oscillator.