Plasma-Induced Damage on 90nm-Technology MOSFETs
等离子体对90nm工艺MOS器件的损伤

Plasma-induced damage on 90nm Cu dual Damascene technology devices is investigated.Experiments on the hot carrier stress for nMOSFETs and NBTI stress for pMOSFETs are conducted.The antenna ratio is still a standard for detecting plasma-induced damage.The via structure shows more plasma damage than other metal structures.This is explained by the via first dual Damascene process.