Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC
钒受主能级在n型4H-SiC中的深能级瞬态傅里叶谱和光致发光

Deep level transient Fourier spectroscopy (DLTFS) measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation.Two acceptor levels of vanadium at EC-0.81 and EC-1.02eV with the electron capture cross section of 7.0e-16 and 6.0e-16 cm2 are observed, respectively.Low-temperature photoluminescence measurements in the range of 1.4~3.4eV are also performed on the sample, which reveals the formation of two electron traps at 0.80 and 1.16eV below the conduction band.These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC, with the location of 0.8±0.01 and 1.1±0.08eV below the conduction band.