A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors
一种基于单电子隧穿结和MOS晶体管的混合随机数发生器

This paper proposes a novel single electron random number generator (RNG).The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit.It is an oscillator-based RNG.MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift.The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator.The RNG circuit generates high-quality random digital sequences with a simple structure.The operation speed of this circuit is as high as 1GHz.The circuit also has good driven capability and low power dissipation.This novel random number generator is a promising device for future cryptographic systems and communication applications.