A Fully Integrated CMOS Readout Circuit for Particle Detectors
一种粒子探测器的CMOS读出电路设计

Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented.The CSA is designed with poly-resistors as feedback components to reduce noise.Compared with conventional CSA,the input referred equivalent noise charge(ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss.The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.