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ISSN: 2333-9721
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Growth of Free-Standing AlN Nanocrystals on Nanorod ZnO Template
用纳米棒ZnO作模板生长无支撑的AlN纳米晶

Keywords: metalorganic vapor phase epitaxy,nanomaterials,nitride
金属有机物气相外延
,纳米材料,氮化物,metalorganic,vapor,phase,epitaxy,nanomaterials,nitride,纳米棒,模板,生长,无支撑,纳米晶,Template,Nanorod,Nanocrystals,growth,mechanism,area,nanocrystals,during,the,growth,process,etching,high,temperatures,means,lateral,diameter

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Abstract:

AlN film is deposited on a nanorod ZnO template by metalorganic chemical vapor deposition.Scanning electron microscopy measurements reveal that this film forms a lying nanorod surface.The grazing incidence X-ray diffraction further proves that it is entirely a wurtzite AlN structure,and the average size of the crystallite grains is about 12nm,which is near the ZnO nanorod diameter (30nm).This means that the nanorod ZnO template can restrict the AlN lateral overgrowth.Additionally,by etching the ZnO template with H2 at high temperatures,we directly achieve epitaxial lift-off during the growth process.Eventually,free-standing AlN nanocrystals are achieved,and the undamaged area is near 1cm×1cm.We define the growth mechanism as a "grow-etch-merge" process.

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