Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs
积累模式p沟道SOI基围栅Fin-FET驱动电流的研究

In this work, comparisons are performed to study the drive current of accumulation-mode (AM) p-channel wrap-gated Fin-FETs. The drive current of the AM p-channel FET is 15% ~ 26% larger than that of the inversion-mode (IM) p-channel FET with the same wrap-gated fin channel, because of the body current component in the AM FET, which becomes less dominative with gate overdrive getting larger. The drive currents of the AM p-channel wrap-gated Fin-FETs are 50% larger than those of the AM p-channel planar FETs, which arises from the effective conducting surface broadening and the volume accumulation in the AM wrap-gated Fin-FETs. The effective conducting surface broadening is due to the wrap-gate induced multi-surface conducting, while the volume accumulation, namely the majority carrier concentration anywhere in the fin cross section exceeds the fin doping density, is due to the coupling of electric fields from different parts of the wrap gate. Moreover, for the AM p-channel wrap-gated Fin-FETs, the current in channel along <110> is larger than that in channel along <100>, which arises from the surface mobility difference due to different transport directions and surface orientations. That is more obvious with gate overdrive getting larger when surface current component plays a more dominative role in the total current.