Monte Carlo Simulation for the Surface Morphology of Anisotropic Etching of Crystalline Silicon
蒙特卡罗法单晶硅的腐蚀工艺表面微观形态仿真研究

This paper presents a Monte Carlo method for the simulation of the surface morphology during wet anisotropic etching.Based on the step flow model,the atomistic characteristics of the active step region of four silicon crystalline families(h+2,h,h),(h,1,1),(h+2,h+2,h),and(h,h,1)are investigated.Atoms with 3 first neighbors and 7 second neighbors on the active step region are restricted in the removal probability under the effect of both micro mask and silicate particles adherence.By applying the above condit...