Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory
界面化学反应形成的纳米颗粒对有机交叉点存储器的影响

We investigate the electrical performance of cross point bistable memory affected by the nanoparticles formed at the organic/electrode interface.The middle medium is 2-amino-4,5-dicyanoimidazole (AIDCN) film fabricated by vacuum evaporation,and the anode and cathode metals of the device are ITO glass and Al,respectively.The microstructure features of the SnOx nanoparticles,which were formed due to the chemical reaction between the tin oxide in ITO and AIDCN,have been investigated using transition electron microscopy (TEM) and X-ray photoelectron spectrum (XPS),etc.The tin element at the AIDCN/ITO interface mainly arises from the tin segregation layer near the surface of ITO.It is demonstrated that the interface of ITO and AIDCN is of the crucial importance of the electrical behavior.Through this kind of in-situ reaction at an interface,a cross point memory with on-off ratio over 1E11 orders are obtained.