Preparation of (SiFe)C DMS Based 4H-SiC Substrate
基于4H-SiC衬底的(SiFe)C的稀磁半导体材料制备

A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate.Its Curie temperature reaches as high as 320K and its technology is compatible with current IC.Moreover,the process includes three annealing steps,named HNH annealing in this paper.Each step during this annealing has been analyzed.Comparisons have been made with different Fe concentrations and experimental results demonstrate that when the concentration of Fe is 0.051,the Curie temperature is the highest.According to measurements,some explanation of this phenomenon is given.