Negative Bias-Temperature Instability in Rapid Thermal Grown SiO_2
快速热生长二氧化硅-硅结构负偏压温度不稳定性

Negative bias-temperature instability in silicon dioxide films grown in a rapid thermalprocessor has been investigated.Rapid thermal oxide MOS structures were found to have alower negative bias-temperature instability than the furnace oxide MOS structures. The effectsof temperature and time during post oxidation annealing in argon, the cooling process afterrapid thermal oxidation and the temperature of post metallization annealing in forming gas onthe negative bias-temperature instability are studied.In addition, evolutions of the flat bandvoltage shift were measured on the rapid thermal oxide MOS structures under an negative biastemperaturestress. Based on these results, the mechanism of the negative bias-temperature instability is discussed.