Ohmic Contact Properties of Multi-Metal Films on n-Type 4H-SiC
多层金属-n型4H-SiC的欧姆接触
Keywords: silicon carbide,ohmic contact,carbon vacancy,interface band structure
碳化硅,欧姆接触,碳空位,界面能带结构,silicon,carbide,ohmic,contact,carbon,vacancy,interface,band,structure,金属,欧姆接触,Films,Properties,band,structure,defect,layer,level,make,clear,during,tunneling,process,create,vacancies,interface,formation,interstitial,compound,analysis,silicide
Abstract:
研究了热退火条件下Au/Ti/Ni-4H-SiC欧姆接触形成机制.通过950 ℃下的快速热退火形成的最低欧姆接触电阻为2.765×10-6 Ω·cm2.SIMS分析表明退火过程中NiSi化合物的形成会带来SiC内部多余C原子的溢出,并在接触面上与Ti形成间隙化合物TiC.这一过程造成接触表面存在由大量C空位形成的缺陷层从而增强了表面间接隧穿.通过界面能带结构图直观地解释了欧姆接触在热退火条件下的形成机制.
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