PPC Effect and Localization in Ge-doped ZnSe Epilayer
掺GeZnSe的稳恒光电导及其局域性效应

Some semiconductor materials exhibit a persistent photoconductivity, which is strongly localized in the region which is pre\|exposed to the light below a certain temperature.When the temperature exceed this temperature (called quench temperature),the persistent photoconductivity and the localization will disappear.The persistent photoconductivity with its localization effect of the Ge\|doped ZnSe semiconductor is studied by measuring its conductivityies before and after laser illumination.The results show that the quench temperature of PPC is about 210K.The localization is also studied by the electrically measuring method.The variation of the resistivity with the position of laser beam scanning the sample below the quench temperature is not observed when the temperature is higher than the quench temperature.The localized PPC effect is mainly attributed to the Coulomb interaction theoretically.