Solid Source Molecular Beam Epitaxy Growth of InAsP Using As2 and As4 Modes
采用As_2和As_4模式的新型全固源InAsP分子束外延生长

Growth properties of As 2 and As 4 mode based upon a home made MBE system are reported.High quality InAsP bulk film and InAs y P 1-y /InP quantum wells are grown on (001) InP substrate under As 2 and As 4 modes,respectively.X ray diffraction (XRD) measurements and simulations reveal the high structural quality of the samples grown under both As 2 and As 4 modes,while the adsorption efficiency of As 2 is found to be higher than that of As 4.The optical properties of samples are measured by room temperature and 10K photoluminescence (PL).The room temperature PL properties of samples grown using As 2 mode in the whole composition range are obviously improved compared with the samples grown using As 4 mode,but the 10K PL properties are comparable.The difference is attributed to the different quantity of defects introduced into the epilayers during the growth because of the relatively complicated growth mechanism of As 4 mode.