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First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO3
Sb掺杂SrTiO3电子结构的第一性原理计算

Keywords: first principles,SrTiO3,Sb-doping,electronic structure,transparent films
第一性原理计算
,SrTiO3,Sb掺杂,电子结构,透明导电薄膜,first,principles,SrTiO3,Sb-doping,electronic,structure,transparent,films,掺杂,电子结构,第一性原理,计算,Electronic,Structure,wide,optical,band,gap,low,density,results,transparency,films,energy,addition,system,behavior,Fermi,level,conduction,bands,electron,doping

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Abstract:

The electronic structure,including band structure,density of states (DOS),and partial density of states of SrTi1-xSbxO.3 with x=0,0.125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory.The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO.3 with x=0.125 and the system shows metallic behavior.In addition,the DOS moves towards low energy and the optical band gap is broadened.The wide band gap and the low density of the states in the conduction band result in the transparency of the films.

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