Degradation Induced by Donor Interface State for Deep-Sub-Micron Grooved-Gate PMOSFET
施主型界面态引起深亚微米槽栅PMOS特性的退化

Based on the hydrodynamics energy transport model,the degradation induced by donor interface state is analyzed for deep submicron grooved gate and conventional planar PMOSFET with different channel doping density,and the results are compared with that induced by acceptor interface states.The simulation results indicate that the degradation induced by the same interface state density in grooved gate PMOSFET is larger than that in planar PMOSFET,and in both structure device,the impact of N type donor interface state on device performance is far larger than that of P type.It also manifests that the degradation is different for the device with different channel doping density.