Dark Current Mechanism of HgCdTe Photovoltaic Detector Passivated by Different Structure
不同钝化结构的HgCdTe光伏探测器暗电流机制

The HgCdTe photovoltaic detectors passivated by single ZnS layer and dual (CdTe ZnS) layers are fabricated on the same wafer.The fabricated devices are characterized by measurements of the diode dark I-V characteristic.The dual-layer passivated diodes show higher performing compared to the single layer passivated diodes,and modeling of diode dark current mechanisms indicate that the performance of the diodes passivated by single ZnS is strongly affected by tunneling current related to the surface defects,which are generated by the technology of passivation.And the result is also supported by the analysis of X-ray reciprocal space map.