Quasi-two Dimensional Analytical Model of DeepSubmicrometer SOI Gate Controlled Hybrid Transistor (GCHT)
深亚微米SOI栅控混合管(GCHT)的准二维电流解析模型

An analytical model for the SOI deep\|submicrometer gate controlled hybrid transistor (GCHT), which exhibits dynamic threshold voltage, is presented for the first time in this paper. Unlike the models of conventional short\|channel MOSFET, this model takes account of the mobile charges controlled by the gate voltage and the base voltage for a quasi\|two\|dimensional analysis of the potential distribution. Based on this model and the parabolic approximation, the surface potential is obtained, which is affected by the channel length and the drain voltage. The dynamic threshold voltage shift of the hybrid transistor is figured out, with the charge sharing effect and DIBL effect being considered. In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect. The improved short\|channel effect and a better threshold voltage stability of GCHT can be explained explicitly by this model. And the model predictions agrees with the numerical simulated results and experimental data very well in this model.