Characteristics of Random Telegraph Signals in NMOSFETs with Ultra Narrow Channels
极细沟道NMOSFET中的大幅度随机电报信号噪声

Random telegraph signals (RTSs) in NMOSFETs with ultra narrow channels was investigated. RTS with large amplitude (>60%) has been observed at room temperature for the first time. The amplitude of RTS is almost independent of the measuring temperature and gate bias when the device is operated in a weak inversion. The observations suggest that the amplitude of RTSs caused by mobility fluctuation and carrier number fluctuation will increase with the reduction of the channel width. Furthermore,the numerical simulation proves that the mobility fluctuation of carriers plays a predominant role when the channel width is below 40nm.