Anomalous Diffusion of Ion Implanted Boron in Silicon
硅中离子注入硼的异常扩散

The influence of implantation damages on the anomalous diffusion of implanted boroninto silicon during rapid thermal annealing has been observed by varying the relative positionof boron profile and damage distribution produced by self-implantation at different energies.The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron. The point defects induc-ed by implantation and by disolution of clusters are a driving force of anomalous diffusion ofboron.In heavily damage case when extended defects are present, the point defects emitted bythese extended defects provide another driving force for the anomalous diffusion.