Design on an ESD Protection Circuit with GG-NMOS Structure in CMOS Technology
CMOS工艺中GG-NMOS结构ESD保护电路设计

An ESD protection circuit which uses a GG-NMOS structure is presented.The operating principle and test results are depicted.An improved project,gate-couple technology,on the circuit is presented,and the anticipated effect is achieved.The ability of the circuit achieves class 2 of the human-body model.It is also indicated that ESD induces damage of the gate oxide with microcosmic mechanisms,where ESD occurs based on simulation.