Ordering Growth of InAs Quantum Dots with Ultra-Thin InGaAs Strained Layer on GaAs Substrates
利用GaAs基上InGaAs应变层制备有序排列的InAs量子点

InAs quantum dots (QDs) are grown on In 0.15Ga 0.85As strained layers.By analyzing the evolvement of dislocations and strain between different layers,combining real time inspection by reflection high-energy electron diffraction (RHEED) and the surface morphology measurement after growth,the width of fabric structure on the surface of the strained layer can be controlled by changing the thickness of the strained layer,and the width of fabric structure is quite narrow when the thickness of In 0.15Ga 0.85As layer is less than the critical thickness of dislocation multiplication.If controlling the QDs layer just to form QDs,QDs will be mainly arranged along the narrow fabric,and spatial ordering of QDs can be achieved.