Experimental Study of Sputtered Aluminum Oxynitride Film on Si Surface
硅表面溅射氮氧铝膜的实验研究

The experimental study of aluminum oxynitride film deposited on Silicon surface by radio frequency reactive sputtering method in a mixture of forming nitrogen anl oxygen gases is reported.The depositing Process, atomic Components and its concentrations, refractive index and breakdown electric field of the depositied films with different oxygen atomic concentrations have been determined. The X-ray d ffraction patters of the film are also given.