Numerical Modeling of Magnetodiode
磁敏二极管的数值模拟

A special magnetodiode with high recombination rate surface has been modeled for the firsttime. Boundary conditions and scaling method which are proper for numerical modeling ofsemiconductor magnetic field sensitive devices have been put forward. Our results are in agreementwith the experimental data, and are very useful for the optimization of semiconductormagnetic field sensitive devices.