A SiCOI MESFET with Multi-Step Dielectric Groove Isolation
多台阶介质槽隔离的SiCOI

Breakdown characteristic of SiCOI (SiC on insulator) MESFET is studied using two-dimensional device simulator,MEDICI.A new type of device structure,SiCOI MESFET with multi-step dielectric groove isolation,is presented.Simulation results show that compared with the single dielectric groove structure,saturated drain current and transconductance of the new structure are significantly improved and high breakdown voltage is remained.SiCOI MESFET with multi-step dielectric groove isolation is a structure for power devices with both high breakdown voltage and large drain current.