Optimum Design of Base Region in Punch-Through Structure Used in Conductivity-Modulated Power Devices
电导调制型功率器件用穿通结构的基区优化理论

Based on the critical electric field model, the optimum design theory of the base region in the punch\|through structure used in the conductivity\|modulated power devices is developed. The expressions of the optimum design are deduced by given the punch\|through factor F to be 4, as is used to calculate the optimum base region parameters of the typical breakdown voltages. The results were compared with the previous values obtained by Y.S.Kao, S.K.Ghandhi and W.Fichtner et al., respectively, which should be used directly in the optimum design of the high voltage power devices such as IGBT,MCT, FCT and rectifier diode, etc.