Cellular-Automata-Based Modeling of Silicon Anisotropic Etching
基于元胞自动机理论的硅各向异性腐蚀模型

Based on the theory of cellular automata,a novel simulation model is proposed to describe the characteristics of silicon anisotropic etching.The influence of silicon crystal structure in different planes during the etching process are considered.Moreover,the collision theory is also introduced into this model,taking many factors into account,such as etching temperature,etchant concentration,and effective particle concentration.With this model,the simulation and analysis of the silicon anisotropic etching process could be carried out rapidly and accurately,which would theoretically direct how best to optimize the processes.