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OALib Journal期刊
ISSN: 2333-9721
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Development of ULSI Interconnect Integration Technology--Copper Interconnect with Low k Dielectrics
超深亚微米集成电路中的互连问题——低k介质与Cu的互连集成技术

Keywords: interconnect integration technology,interconnect limitations,low k dielectrics,Cu wires,3D integration interconnect,RF interconnect,optical interconnect
互连集成技术
,互连的限制和挑战,低k介质,Cu互连,三维集成互连,RF互连,光互连

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Abstract:

Invention and application of low k /Cu interconnect integration technology is a revolutionary advance in integrated circuits (IC) industry and technology.Now low k /Cu interconnect integration technology has become one of most important key technologies in IC industry.In this paper,the trend of IC technology and the requirements for interconnect technology,the challenges of interconnect technology development,and the potential solutions to the challenge are review firstly.Then the dual Damascene Cu interconnect integration technology and the technology challenges are introduced.The key issues of the dual Damascene Cu interconnect integration technology are described and reviewed.Finally,the trend of the beyond Cu interconnect integration technology and potential interconnect technology are prospected.

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