A Multi-Objective Global Optimization Extraction for HCI Model Parameters in Deep-Submicron Devices
深亚微米HCI模型参数多目标全域提取方法

A hot carrier injection degradation model for a DSM(deep submicron)pMOS device is studied,which is based on the physical model of a degradation gate current.A multi-objectives global optimization extracting method for reliability parameters realized by L-M (Levenberg-Marquardt) algorithms is proposed.The lower parametric sensitivity issues are analyzed and solved.A recursion algorithm for quantities of injected charges is proposed for accelerating the process.Finally,the results of optimal parameters are listed from both the theory and the measurements for comparison.