TEM Study of Crystallization of Amorphous Layer in Er~+ Implanted Si
Er~+注入单晶硅中非晶层晶化过程的TEM研究
Yan Yong/Laboratory of Solid State Micrbstructures,
Nanjing University Wang Peida/Institute of Semiconductors,
Academia Sinica Ha Meisheng/Center of Modern analysis,
Nanjing University Sun Huiling/Microelectronics Research & Development Center,
Academia Sinica Li Qi/Laboratory of Solid State Micrbstructures,
Nanjing University Feng Duan/Laboratory of Solid State Micrbstructures,
Nanjing University,
严勇,
王培大,
胡梅生,
孙慧龄,
李齐,
冯端
Keywords: Ion implantation,Fault,Solid-phase epitaxy,Crystallization,HREM
离子注入,单晶硅,非晶层,晶化,TEM
Abstract:
剖面透射电镜的变温观察及高分辨电子显微镜(HREM)象表明,Er~+注入(注入能量350kev,注入剂量1×10~(15)cm~(-2))硅单晶后,在表面可形成一连续非晶层。热退火过程中,非晶层可以从非晶/单晶界面处进行固相外延和在内部成核两种方式进行再结晶以至形成多晶层。再结晶的晶粒中存在大量微孪晶和堆垛层错。
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