Si1-xCx Alloy Formation and Its Characteristics After Carbon Ion Implantation in Silicon
C离子注入Si中Si-C合金的形成及其特征

Si 1-x C x alloys with carbon concentration of 0 6%-1 0% are formed by means of ion implantation and high temperature annealing.The effects of radiation damage,implanted carbon ion doses and annealing techniques on the formation of Si 1-x C x alloy s are studied.The formation mechanism of alloy and the characteristics of the strain distribution are also discussed.If the implanted carbon dose i s less than that to form an amorphous Si layer,the implanted carbon atoms will incline to combining with the defects produced during the carbon implantation th at the defect clusters are formed.It was difficult to form Si 1-x C x alloys during the high temperature annealing.Damage introduced by Si ion pre -implantation to form an amorphous region is beneficial to the formation of Si 1-x C x alloys.If the damage produced during the more carbon ion i mplantation is large enough to form an amorphous Si layer,the pre-implantation of Si ions will introduce more defects that are difficult to annihilate.Thus,the pre-implantation is disadvantagous for the formation of Si 1-x C x alloys.Compared with the two-step annealing method,rapid annealing is favora ble to the formation of Si 1-x C x alloys due to the existence of m ore vacancy positions for carbon atoms.The heterogeneous distribution of implant ed C atoms results in the formation of regions with different strain,which can b e observed with X-ray diffraction.