Optical Characteristics of C-Doped GaN
掺碳氮化镓的光学性质

Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE).The surface carrier concentration becomes higher with the the augment of the C 3H 8 flow,which cause the Raman spectra shifting to high energy and the E 1(LO) mode becoming more feeble.The photoluminescence intensity with the C 3H 8 flow is ascribed to the effect of self compensating of the carbon dopants.High concentration of the dopant destroys the lattice of crystal and varies the optical properties essentially.