Current Properties in Doped Single-Walled Carbon Nanotubes
掺杂单壁碳纳米管的电流特性

The numerical calculations are performed for the in dividual doped single-walled carbon nanotubes (SWNTs) (metallic and semiconduct or ones) to investigate current properties depending on the bias voltage,doping concentration and tubular diameters within framework of the Boltzmann equation a nd energy dispersion relation of SWNTs.The analysis shows that the current exhib its jump characteristic with varying bias voltage.The current properties,such as the magnitude,jump period and jump amplitude are determined directly by tubular diameter of SWNTs,the state density near Fermi le vel after SWNTs being doped and the capability for transport electrons in differ ent transport channels,as well as current value is influenced by temperature.