Characteristiecs of TiSi_2 Thin Film and TiSi_2/Poly-Si Polycide Gate Structure
TiSi_2薄膜的形成特性及TiSi_2/多晶硅复合栅结构的研究

The properties of TiSi_2 silicide thin films produced either by reaction or by sputtering havebeen investigated.MOSFET and MOS capacitors were fabricated employing a composite TiSi_2/poly-Si gate structure.Combining electrical measurements with TEM (cross-section) in situobservation, the dielectric degradation phenomena in gate oxide of these structures,which ap-peared after high temperature annealing, and their effects on the properties of devices havebeen reported in detail.Based on our experimental and analytical results, the authors demonstrated that the high tensile stress induced by the formation of silicide is responsible for thedegradation of the gate oxide.The experimental results have revealed that, there is a criticalthickness of polysilicon for buffering of this high tensile stress,which does not appear todiffer significantly for thermal diffusion or ion implantation doped Polysilicon samples.