Stress Induced Leakage Current in Different Thickness Ultrathin Gate Oxide MOSFET
不同厚度超薄栅氧化物MOSFET的应力诱导漏电流(英文)

A study of the gate current variation is presented for various thickness ultrathin gate oxides ranging from 1.9 to 3.0nm under the constant voltage stress.The experimental results show the stress induced leakage current(SILC) includes two parts.One is due to the interface trap-assisted tunneling.The other is owing to the oxide trap-assisted tunneling.