A New Method of 2D Contour Extraction For Fast Simulation of Photolithographic Process
一种快速光刻模拟中二维成像轮廓提取的新方法

A new fast algorithm used for simulating optical intensity profile on silicon wafer is introduced,and a new algorithm for 2D contour extraction of shaped silicon areas based on intensity simulation of sparse aerial points is presented.This algorithm gives out groups of sampling lines according to the mask layout,thus effectively delimits the searching area for contours on wafer.A searching scheme to locate contour point on a sampling line having monotonous intensity distribution is presented and discussed in detail.It indicateds that it is a fast,efficient and practial way to calculate area contours on silicon,and a fitable algorithm for the huge number of calculating of the optical proximity correction.