Extraction Method of Defect Size Distribution Parameter on Silicon Wafer
硅片缺陷粒径分布参数的提取方法

The defect size distribution is essential in yield prediction of an IC's products.Based on an electronic measurement technology,a method to extract the parameters of the defect size distribution affecting lithography process in IC manufacture is presented.The size distribution of the fault is gotten based on the data from the double bridge test structure.The parameter of the defect size distribution is deduced according to the relations of the defect and the fault.The results show that the method of extracting the defect size distribution is suitable to different defect size distribution model,and the extracted parameters can be used to predict the IC product yield.