Self-Aligned SiGe HBT Based on Dry-Wet Etching
基于干/湿法腐蚀的自对准SiGe HBT器件

With dry-wet etching technology,self-aligned SiGe HBTs are studied.The materials of Si and SiGe are etched by KOH solution and SF 6,and the results of f T=40GHz and f max=127GHz are obtained.